​​Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantumwell solar cells​

​Matthias Auf der Maur ^a,<, GiladMoses ^b,c, JeffreyM. Gordon^b, Xuanqi Huang^d, Yuji Zhaod, Eugene A. Katz ^b

^a Department of Electronic Engineering, University of Rome Tor Vergata, 00133 Rome, Italy

^b Department of Solar Energy and Environmental Physics, Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Sede Boqer Campus, 8499000, Israel

c Albert Katz School for Desert Studies, Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Sede Boqer Campus, 8499000, Israel

^d School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA

Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

​ 2021 SOLMAT (002).pdf

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