Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantumwell solar cells
Matthias Auf der Maur a,<, GiladMoses b,c, JeffreyM. Gordonb, Xuanqi Huangd, Yuji Zhaod, Eugene A. Katz b
a Department of Electronic Engineering, University of Rome Tor Vergata, 00133 Rome, Italy
b Department of Solar Energy and Environmental Physics, Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Sede Boqer Campus, 8499000, Israel
c Albert Katz School for Desert Studies, Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Sede Boqer Campus, 8499000, Israel
d School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.