The Nano-Fabrication Center

HMX

HMxSquare SUSS MicroTec

The HMxSquare is designed to address the needs of customers in the semiconductor industry requiring high quality substrate processing for photomask applications as well as opto-electronics, OLED, and special semiconductor back-end (MEMS) applications. It offers develop, etch and cleaning functionalites.

The HMxSquare is manually operated and enables processing of small series or pilot production of special substrate. It combines stability and reliability of the proven performance of the original HMx series platform with today's needs for electronic control functions, implementation of new cleaning techniques and environmental and safety requirements.

Specifications

✔ Develop 400K 1:4

✔ Full jet spray

✔ Aqueous-based etch

✔ Acid clean (Piranha)

✔ 1 MHz megasonic cleaning by DI and Ammonia

✔ Mask 5 inch or 4 inch process

✔ Wafer from 2 inch to 4 inch process

https://www.suss.com/en/products-solutions/photomask-equipment/hmx-series

Wire bonding

Wire bonder West bond 7476E

wire bonder.JPG

Machine description

An ultrasonic/thermosonic wedge-wedge wire bonder designed to interconnect wire leads to semi-conductor, hybrid or microwave devices.

Principle of operation

Bonds are made by the wedge-wedge technique using ultrasonic energy to attach wire at room temperature. The bonding tool is guided manually by the operator using hand/eye reference to bond targets and elevations.

Wires

The machine bonds aluminum or gold wires ranging from 0.0007 in. to 0.002 in.

wire bonder 2.JPG

For more information: http://www.westbond.com/index.htm ; http://www.westbond.com/7400espc.htm

7476E Manual.pdf

Wire Bonder instructions.pdf

Wafer bonding

Wafer Bonder SB-6 Bonder-Karl-Suss

This is Karl-Suss model SB-6 substrate bonder. Wafer bonding up to 6" wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.

wafer bonder.JPG

Equipment Specifications

✔ Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity

✔ Upper and lower heating of samples

✔ 5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen

✔ Sample size: pieces to 6" wafers, aligned bonding by using MA/BA-6 aligner

✔ Anodic bonding to 2000 V

✔ Windows-based computer control

Wafer Bonder- instructions.pdf

wafer bonder User Guide.pdf

Plasma asher

Pico low-pressure plasma system-Diener Electronic

plasma asher.JPG

Applications

Cleaning of surfaces

(e.g. before bonding, soldering or gluing)

Activation of surfaces

(e.g. before printing, varnishing or gluing)

Etching of surfaces

(e.g. microstructuring of silicon or etching of PTFE)

Coating of surfaces - plasmapolymerization

(e.g. deposition of hydrophobic / hydrophilic layers)

Application areas

Analysis (REM, TEM)

Archaelogy

Automotive industry

Elastomer industry

Medical technology

Plastics industry

Research and development

Semiconductor industry

Small scale manufacturing

Sensor technology

Sterilization

Textile treatment

...

Generator Frequencies:

40 kHz: Power 0 - 200 W;

Generators continuously adjustable from 0 - 100%

For more information http://www.plasma.de/en/plasmasystems/pico.html

http://www.plasma.de/pdfs/pico-englisch.pdf

Plasma Asher working instructions.pdf

Dicer

Dicer ADT-7100

✔ Manufacturer: ADT (Israel)

✔ Tool location: Lab in building 90

✔ Tool purpose: dicing the substrate to dies/chips

✔ with full units separation

✔ Samples type: silicon and ceramic (glass, sapphire, alumina) substrates

✔ Samples size: up to 7" wafers

✔ Substrate thicknesses range : 130um – 2500um

✔ Dicing precision: for silicon samples – up to 30um (including the edge chipping),

✔ for thick glasses – up to 60um (including edge chipping).

✔ Die size limitation: >500um wafer thickness – 1x1mm, <500um – 3x3mm

RTP

Jipelec JetFirst RTP

The Jipelec JetFirst RTP feature a temperature measurement and control system to provide accurate and repeatable thermal behavior from low to high temperatures

The lamp array, upper flange and quartz window are mounted in a rotating top lid allowing full access to the chamber for easy loading and unloading of the wafers and piece-parts samples

Features

✔ RTA: Annealing for silicon and III-V wafers

✔ RTO: Rapid Thermal Oxidation

✔ Contact Alloying

✔ Up to 100 mm wafers

✔  Cold wall chamber technology
✔  Pyrometer and thermocouple temperature control
✔  tmospheric and vacuum process capability
✔  One purge gas line
✔  process gases are connected: N2, O2.
✔  PC control
✔  Vacuum valve and vacuum gauge

✔ Wafer Capable: 4"/100mm max

✔  Temperature Range: ambient to 1300 deg C max
✔  Ramp rate: 1 degC/s to 400 degC/s
✔  Cold Wall Chamber Technology

✔ Vacuum = 10-6 mbar Max

✔ Thermocouple: Ambient to 1000 Degrees C
✔ Pyrometer Control: 150 to 1000 Degrees C

Applications

✔ RTA: Annealing for silicon and III-V wafers

✔ RTO: Rapid Thermal Oxidation

✔ Contact Alloying

AFM

AFM system, Veeco dimension 3100

The Dimension 3100 Scanning Probe Microscope (SPM) produces high-resolution, threedimensional

images by scanning a sharp tip over the sample surface. The tip is part of a flexible

cantilever mounted on one end of a cylindrical piezoelectric tube mounted near the top of the

microscope. Voltages applied to the X and Y electrodes on the piezoelectric tube deflect the tube

horizontally to produce a precise raster scan over the sample surface. A voltage applied to the Z

electrode on the piezo tube controls the vertical height of the tip. A stepper motor coupled to a lead

screw translates a slide with the sample attached. A separate motor drive controls the height of the

microscope and tip relative to the sample surface.

Technical Specifications

Enhanced Motorized Positioning Stage

• Inspectable Area 120mm x 100mm

• Resolution: 2μm

• Unidirectional Repeatability: 3μm typical, 10μm maximum

• Bidirectional Repeatability: 4μm for x-axis, 6μm for y-axis typical for point to point

motion

AFM training.pdf

AFM short training.pdf

AFM manual.pdf

Profilometer

Stylus Profilometer – Veeco Dektak-8

✔ Performs contact-based 2D or 3D topography measurement to characterize film thickness, roughness, stress and defects on samples up to 200mm

✔ Delivers 262 um vertical range with 1 Å vertical resolution at 6.55 um range

✔ Has Step Height Repeatability of 7.5 Å step, 1 sigma

✔ Allows Maximum sample thickness of 25.4mm

Profilometer manual+protocol.pdf

Ellipsometer

J.A. Woollam Aplha-SE with CompleteEASE software

General

General tools

HMX

HMxSquare SUSS MicroTec

Wire bonding

Wafer bonding

Plasma asher

Dicer

RTP

AFM

Profilometer

Ellipsometer

General

General tools

HMX

HMxSquare​ SUSS MicroTec

Wire bonding

Wafer bonding

Plasma asher

Dicer

RTP

AFM

Profilometer

Ellipsometer

HMxSquare SUSS MicroTec