DRIE Corial 200IL
The Corial 200IL –DRIE is used to etch various materials, such as silicon dioxide, silicon nitride,Sapphire , SiC , and various metals from the surface of a substrate using several reactive gases in a RF (radio frequency) induced plasma.
RIE combines plasma and ion beam removal of the surface of a substrate. The etching gas (as in plasma etch) enters the reactive chamber and is ionized by the application of an electric field such as RF. Individual gas molecules are accelerated to the substrate surface. These charged particles remove the top layer of the material by the combined efforts of mechanical and chemical reactions. This process often has high selectivity to the etched material (some materials will etch much faster than others), but the etch is isotropic.
DRIE uses following gases:
✔ O2 (oxygen)
✔ SF6 (sulfur hexafluoride)
✔ CHF3 (trifluoromethane)
✔ Ar (Argon)
✔ BCl3 (Boron trichloride)
✔ Cl2 (Chlorine)
✔ C2H4 (Ethylene)
✔ H2( Helium )
✔ Wafer size max 4 inch without cooling and Bais
✔ 2 inch with cooling
✔ Wafer thickness max 8mm
✔ The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a butterfly valve between the chamber and the pump.
✔ The maximum RF power is 300 W and ICP power 1000kW.
✔ Inductively Coupled Plasma source with hot walls to reduce
polymer condensation and to enhance plasma cleaning. It
produces High Density Plasma in a wide working pressure range
(1 to 50 mT) for fast etching of up to 200 mm wafers, Helium assisted heat exchange between cathode, shuttle and
wafers with soft mechanical clamping to maintain wafer
temperature below 100°C.
✔ Access to numerous plasma modes in one process:
-Inductively Coupled Plasma + RF biasing
-Reactive Ion Etching
-Inductively Coupled Plasma for low damage etching.
✔ Selective processes using highly polymerizing gases
(Polymers condensate only on the wafer which is the coldest
part of the system, giving rise to high selectivity),
✔ Low contamination of process chamber which allows to
etch different materials using fluorinated and chlorinated
chemistry with minimum memory effect.
✔ Minimum parasitic capacitive coupling giving rise to
low plasma potential (< 15 Volts). It enables:
-Low damage etching with NO RF biasing,
-Isotropic etching with low RF biasing.
-Anisotropic etching with high RF biasing.
Manual Corial DRIE 200L.pdf