Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology
Contact details:
Email: danrich (at) 
Phone: +972(0)86461648
Office:  54/210
Key words for expertise:
Optical and structural properties of quantum heterostructures and nanostructures, III-V semiconductor thin films, quantum wells, III-V self-assembled quantum dots, II-VI core/shell nanocrystals, nanowires, phase separation in semiconductors, time-resolved optical spectroscopy, cathodoluminescence (CL) imaging and spectroscopy, scanning electron microscopy, near field scanning optical microscopy, and atomic force microscopy
Vision for participation in the QI center: 
We are interested in using our experience in optical studies of MBE-grown self-assembled quantum dots to fabricate and study single photon sources.
Selected publications:
  1. Y. Estrin, D. H. Rich, S. Keller, and S. P. DenBaars, Temperature Dependence of Exciton-Surface Plasmon Polariton Coupling in Ag, Au, and Al Films on InxGa1−xN/GaN Quantum Wells Studied with Time-Resolved Cathodoluminescence, J. Appl. Phys. 117, 043105 (2015).
  2.  Y. Estrin, D. H. Rich, A. V. Kretinin, and H. Shtrikman, Influence of Metal Deposition on Exciton-Surface Plasmon Polariton Coupling in GaAs/AlAs/GaAs Core-Shell Nanowires Studied with Time-Resolved Cathodoluminescence, Nano Lett. 13 (4), pp. 1602–1610 (2013).
  3. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111), J. Phys. D: Appl. Phys. 44, 505101 (2011).
  4. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111), Appl. Phys. Lett. 98, 061903 (2011).
  5. O. Moshe, D. H. Rich, B. Damilano and J. Massies, Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111), Phys. Rev. B 77, 155322 (2008).
  6. S. Khatsevich, D. H. Rich, E.-T. Kim, and A. Madhukar, Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots, J. Appl. Phys. 97, 123520 (2005). 
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